[17p-F214-1~14] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[17p-F214-6] Reduction of antiphase domain generation in MOVPE-grown GaAs on on-axis Si (100)

〇Ryo Nakao^1,2, Tomonari Sato¹, Hiroki Sugiyama¹, Shinji Matsuo^1,2 (1.NTT Device Technology Labs., 2.NTT Nanophotonics Center)

Keywords:Si substrate, direct growth

It is important to fabricate compound semiconductors on on-axis Si(100) substrate. We have reported that atmospheric pressure, insted of reduced pressure, is essential for reducing antiphase domains (APDs). In this paper, we describe the further reduction of APD generation at the GaAs/Si interface by changing surface temperature when starting TBAs supply.