[17p-P10-1~93] 10 スピントロニクス・マグネティクス（ポスター）

▲ [17p-P10-90] Effect of material selection on bonding interface for integrating epitaxial spintronic devices by Three-dimensional (3D) integration technology

〇(PC)Jiamin CHEN^1,2、Yuya Sakuraba²、Kay Yakushiji³、Hideki Takagi³、Yuuichi Kurashima³、Naoya Watanabe³、Katsuya Kikuchi³、Shinji Yuasa³、Kazuhiro Hono^2,1 (1.Tsukuba Univ.、2.NIMS、3.AIST)

キーワード：Wafer bonding, MRAM, Magnetic sensor

Three-dimensional (3D) integration technology based on wafer bonding and backside silicon removal processes,^[1] which can stack epitaxial spintronic devices on polycrystalline devices or electrode vertically, is a promising technology not only for utilizing epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) device for next generation ultrahigh-density hard disk drives (HDDs) read head sensor,^[2] but also for 3D stacking of epitaxial magnetic tunneling junctions (MTJs) in ultrahigh-density MRAM.^[3] To employ this technology for future application, one important issue to be overcome is material selection for perfect bonding interface. Therefore, in this study, we investigated bonding interface condition dependence on different capping materials for direct wafer bonding processing.