[18a-B303-6~9] 3.14 Optical control devices and optical fibers

[18a-B303-7] LNOI waveguide fabricated on Si using surface activated bonding with ion beam bombardment

〇Ryo Takigawa¹, Eiji Higurashi^2,3, Tanemasa Asano¹ (1.Kyushu Univ., 2.AIST, 3.Univ. Tokyo)

Keywords:LNOI waveguide/Si, Surface activated low-temperature bonding, Hetero photonics

In this presentation, we report the LNOI waveguides on Si substrates using surface activated low-temperature bonding with Ar ion beam bombardment. The sufficient bond strength between LN core and SiO2 clad was demonstrtaed to withstand the post-bond processing—in particular wafer-thinning—required for waveguide fabrication. The TEM image of the bonding interface showed that no void or crack exists in nano-level. We will discuss the optical propagation characteristics and the bonding interface analysis of the resulting LNOI waveguides in details.