[18a-P7-1~23] 12.4 Organic light-emitting devices and organic transistors

[18a-P7-4] Single Nano-sized InN Quantum Dots Solution

〇Junki Nagakubo¹, Masaaki Hirakawa¹, Tsutomu Nishihashi¹ (1.ULVAC, Inc.)

Keywords:Quantum Dots, Nitride, Phosphor

Quantum dots are attracting attention as next-generation fluorescent materials because of showing a sharp emission spectrum due to transitions between discretized levels. In recent years, a DC light emitting device using a quantum dot as an active layer of (QLED), which achieved high EQE (~18%) almost equal to an organic light emitting diode (OLED) has been reported. However, quantum dots conforming to RoHS have some problems of poor heat resistance and withstand voltage. We focused on more robust nitride semiconductors and established a synthesis method of InN quantum dots.