[19a-D103-1~12] 15.6 IV族系化合物（SiC）

▲ [19a-D103-12] A study of the CVD growth condition for filling 50-μm 4H-SiC deep trench

〇Shiyang Ji¹、Ryoji Kosugi¹、Kazutoshi Kojima¹、Kohei Adachi^1,2、Yasuyuki Kawada^1,3、Kazuhiro Mochizuki^1,4、Akiyo Nagata¹、Yasuko Matsukawa¹、Yoshiyuki Yonezawa¹、Sadafumi Yoshida¹、Hajime Okumura¹ (1.AIST、2.Mitsubishi Electric、3.Fuji Electric、4.Hitachi Ltd.)

キーワード：trench filling, silicon carbide, CVD

Different with the shallow trench filling, there have some new problems in filling 50-um 4H-SiC deep trench, which were addressed and studied in this work. Then, the revision of CVD growth condition was proposed. Finally, the complete fill of the deepest 4H-SiC trench to now, was achieved.