[19a-E202-1~10] 15.4 III-V族窒化物結晶

[19a-E202-4] Si(100)基板上に転送したGaNエピタキシャル層の残留応力評価

〇梁 剣波¹、Zhou Yan²、Singh Manikant²、Gucmann Filip²、Pomeroy James²、Kuball Martin²、重川 直輝¹ (1.大阪市大工、2.ブリストル大学)

キーワード：GaN、表面活性化接合、薄膜転送

GaN based power devices have been fabricated on SiC, sapphire, and Si substrates.¹ The output power densities of the devices are limited by the thermal conductivities of the substrate materials. If it is possible to transfer the GaN epitaxial layer onto diamond substrate with the highest thermal conductivity among materials, which would largely increase the output power density of the devices. In this work, we explored the transfer process of GaN epitaxial layer and investigated the residual stress of the GaN transferred onto Si (100) substrate.