[19p-G203-1~7] ゲルマニウムはシリコンを代替するのか？

▲ [19p-G203-2] Ge NW FETs Fabrication

〇Yao-Jen Lee Lee¹、F.-J. Hou¹、P.-J. Sung¹、M.-S. Yeh¹ (1.NDL)

キーワード：Ge, GAA, high k

Germanium is attractive for the future technology node application because of its two times higher electron mobility and 4 times higher hole mobility than that of Si counterpart. The lower band gap of Ge also allows the supply voltage scalability to satisfy the post-Si CMOS era. However, the Ge MOSFET technology is facing several serious challenges, including fast n-type dopant diffusion, high junction leakage, EOT scaling, Dit reduction and enormous dislocation defects in the Ge epi-layer on Si substrates because of the large lattice mismatch to Si. Herein, we propose a feasible pathway to scale the Ge MOSFET technology by using a Ge gate-all-around (GAA) nanowire (NW) FETs.