[19p-P11-1~31] 21.1 合同セッションＫ 「ワイドギャップ酸化物半導体材料・デバイス」

▼ [19p-P11-11] Trial of the Ga doping to the Sprayed ZnO Nano-Particle Layers by mixing and annealing with Ga₂O₃

〇(M1)MD MARUFUL ISLAM¹、Atsuya Tabuchi¹、Toshiyuki Yoshida¹、Yasuhisa Fujita¹ (1.Shimane Univ.)

キーワード：Semiconductor, ZnO, Nanoparticle Layer

Sprayed ZnO-nanoparticle (NP) layers can lead simple and low-cost processes and large widening of the LSI applications. In spite of the hardness to obtain the p-type conduction in ZnO-related materials, both p-type and n-type conductive ZnO-NP layers were successfully realized in our laboratory, using the ZnO-NPs synthesized by the ordinary developed arc-discharge-mediated gas evaporation method. Using this technique, the p-n junction type near-UV LEDs, p- and n-channel TFTs had been successfully demonstrated. However, the extreme high resistivity has been the neck for the progress and the practical use. In this presentation, we tried to reduce, at first, the resistivity of the n-ZnO NP-layers by doping Ga atoms by mixing and annealing with the Ga₂O₃-NPs (expecting the diffusion of Ga atoms into ZnO-NPs). Here, we successfully reduce the resistivity of the NP-layers from the order of Giga-Ohm to the order of 10k-Ohm, drastically. Details will be presented.