The 65h JSAP Spring Meeting, 2018

Presentation information

Poster presentation

21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19p-P11-1~31] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Mon. Mar 19, 2018 4:00 PM - 6:00 PM P11 (P)

4:00 PM - 6:00 PM

[19p-P11-28] Development of hydrogen gas sensor using single-crystalline ZnO layer grown by sputter epitaxy

Toshiya Kumei1, Shota Nakamichi1, Asuka Fujikawa1, Kohei Ogura1, Tomoki Shinta1, A-i Mizuno1, Ki Ando1, Hiroyuki Shinoda1, Nobuki Musukura1 (1.Tokyodenki Univ.)

Keywords:ZnO layer, sputter, hydrogen gas sensor

本研究では超高真空高周波マグネトロンスパッタ法を用いてZnO単結晶層の成長を行った.ガスセンサ用の材料としてこの単結晶層を用いることで従来のガスセンサと比較して高感度な検出が期待できる.今回はH2ガスセンサを作製しその感度特性について検討を行った.