[19p-P11-1~31] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19p-P11-30] Effect of metal compounds and reaction site atmosphere in mist CVD

〇(M1)Masahito Sakamoto¹, Toshiyuki Kawaharamura^1,2 (1.Kochi Univ. of Technol, sys.eng., 2.Kochi Univ. of Technol, Res. Inst.)

Keywords:mist CVD, Thermal analysis, TG-DTA

One method for obtaining a functional thin film under atmospheric pressure is the mist CVD method. In this method, there are metallic compounds which can not form a thin film. In order to elucidate the cause, the thermal decomposition reaction of the metal compound in the reaction field atmosphere was observed. A TG-DTA apparatus was used as a measuring apparatus.