2018年第65回応用物理学会春季学術講演会

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22 合同セッションM 「フォノンエンジニアリング」 » 22.1 合同セッションM 「フォノンエンジニアリング」

[20p-C304-1~15] 22.1 合同セッションM 「フォノンエンジニアリング」

2018年3月20日(火) 12:45 〜 17:00 C304 (52-304)

渡邉 孝信(早大)、山本 貴博(東理大)、森 孝雄(物材機構)

14:30 〜 14:45

[20p-C304-7] Enhanced Performance of Si Membrane-based Thermoelectric Generator
by Al Ultrathin Layer Deposition

Masahiro Nomura1,2、Anthony George1、Ryoto Yanagisawa1 (1.IIS, Univ. of Tokyo、2.JST)

キーワード:phonon engineering

In coming years, the Internet of Things (IoT) will expand to include many more remote devices requiring an ongoing energy source. On-chip thermoelectric generators (TEG) could provide a valid energy harvesting mechanism to IoT devices if the power-cost ratio could somehow be improved. Si membranes are innately inexpensive, but offer limited thermoelectric efficiency compared to expensive alternatives. Recent works have identified phonon surface scattering as an important factor in lowering thermal conductivity and improving the ZT of nanostructured Si. This work demonstrates a low-cost large-area method for enhancing the performance of simple Si membrane devices via single-nanometer Al thin film deposition.