[18a-E216-1~10] 10.4 半導体スピントロニクス・超伝導・強相関

▲ [18a-E216-7] Enhancement of room-temperature spin signals in Ge lateral spin devices by improving the quality of Heusler/Ge interfaces

〇Michihiro Yamada^1,2、Makoto Tsukahara¹、Fumiaki Kuroda¹、Shinya Yamada^1,3、Tetsuya Fukushima^4,5、Kentarou Sawano⁶、Oguchi Tamio^7,8、Kohei Hamaya^3,1 (1.Osaka Univ.、2.JSPS Research Fellow、3.CSRN, Osaka Univ.、4.INSD, Osaka Univ.、5.IDS, Osaka Univ.、6.Tokyo City Univ.、7.ISIR, Osaka Univ.、8.MI2I NIMS)

キーワード：semiconductor, Ge, spin injection