The 80th JSAP Autumn Meeting 2019

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Poster presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[18a-PB3-1~47] 15.4 III-V-group nitride crystals

Wed. Sep 18, 2019 9:30 AM - 11:30 AM PB3 (PB)

9:30 AM - 11:30 AM

[18a-PB3-6] Interface Characterization of Ultra-thin AlN Intermediate Layer on Epitaxial Graphene using N2 plasma irradiation

〇Yuta Kamada1, Tomoya Takeuchi1, Riku Shamoto1, Akihiro Hashimoto1 (1.Fukui Univ.)

Keywords:Ultra-thin AlN Intermediate Layer, Epitaxial Graphene