[18p-N302-1~18] 13.7 Compound and power electron devices and process technology

[18p-N302-6] Mapping of photo-electrochemical etched Ni/GaN Schottky contacts
using scanning internal photoemission microscopy (Ⅱ)
--Comparison of n-type and p-type crystals--

〇(M1)Ryo Matsuda¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Tomoyoshi Mishima³, Kenji Shiojima¹ (1.Fukui Univ., 2.SCIOCS, 3.Hosei Univ.)

Keywords:GaN, scanning internal photoemission microscopy, photo-electrochemical etching

We present the experimental results on mapping characterization of selectively photo-electrochemical or ICP etched p-type and n-type GaN surfaces by using scanning internal photoemission microscopy. The photocurrent increased by 4 or 5 % in the photo-electrochemical etched regions for both n- and p-GaN. The photocurrent increased by 10 % in the ICP etched regions for n-GaN as well, but significantly decreased by 69 % for p-GaN. We confirmed that this method can clearly visualize the etching pattern as the photocurrent image.