[18p-PB5-1~36] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18p-PB5-24] Effect of annealing gas in thermal diffusion-type Ga-doping in ZnO nanoparticles

〇Toshiyuki Yoshida¹, Maruful Islam Md², Yasuhisa Fujita¹ (1.Shimane Univ. Nat. Sci&Technol, 2.Shimane Univ. Sci.&Eng.)

Keywords:nanoparticle, Zinc Oxide, Ga doping

Thermal diffusion-type Ga doping in ZnO nanoparticles is investigated, which will be used to fabricate thin-film-transistors (TFTs) with spraying or inkjet processes. Now, by our Ga-doping, the sheet resistance of ZnO nanoparticle layers had been reduced from G-Ohm/sq or M-Ohm/sq order to 225 Ohm/sq in minimum. It is clear, in this stage, that Ga atoms were successfully diffused in ZnO particles, however, the sheet resistance of the particle layer does not decrease as expected from the diffusion amount, and the cause is under investigation.