[19p-E307-1~15] 9.4 熱電変換

▲ [19p-E307-15] Interface engineering to enhance the thermoelectric properties of solution-processed thin film

〇Ajay Kumar Baranwal¹、Shrikant Saini²、Daisuke Hirotani³、Tomohide Yabuki²、Satoshi Iikubo³、Koji Miyazaki²、Shuzi Hayase¹ (1.Univ. Electro-Commu、2.Kyushu Inst. Tech.、3.Kyu. Inst. Tech.)

キーワード：Ultra low thermal conductivity, CsSnI3 Perovskite, Thermoelectric devices

Solution-processed materials have significant relevance for thermoelectric applications owing to easy and low-cost processing. However, the trade-off among thermoelectric parameters hinders their prospect for efficient thermoelectric applications. Perovskite-based multi-atomic crystals are in limelight because of ultra-low thermal conductivity. Among them, CsSnI₃ are inorganic perovskite crystal to be explored for thermoelectric applications. The CsSnI₃ crystal assists the existence of Sn²⁺ to hold the SnI₆ octahedra. However, the instability of Sn²⁺ into Sn⁴⁺ leads to generate more conducting behavior and intrinsic defects. We utilize this novel unusual behavior of CsSnI₃ crystal by employing an inorganic scaffold which supports the CsSnI₃ crystal growth by providing improved surface area. Due to the differed resulting crystal growth, the electrical conductivity and phonon scattering resistance were increased.
The details of fabrication and figure of merit enhancement in composite film shall be discussed in detail in the conference.