The 80th JSAP Autumn Meeting 2019

Presentation information

Print

Oral presentation

17 Nanocarbon Technology » 17.3 Layered materials

[20a-E201-1~10] 17.3 Layered materials

Fri. Sep 20, 2019 9:00 AM - 11:45 AM E201 (E201)

Kenzo Maehashi(TUAT)

9:00 AM - 9:15 AM

[20a-E201-1] Operation mechanism analysis of MoS2/h-BN/Graphite stack based non-volatile memory device

〇Taro Sasaki1, Takashi Taniguchi2, Kenji Watanabe2, Tomoki Nishimura1, Kosuke Nagashio1 (1.Tokyo Univ., 2.NIMS)

Keywords:2D materials, memory