[20a-E302-1~13] 13.8 Optical properties and light-emitting devices

[20a-E302-5] Nitride-based tunnel junction current confinement structures by Ar plasma irradiation toward VCSELs

〇Mahito Odawara¹, Ryota Fuwa¹, Kazuki Kiyohara¹, Syo Iwayama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Satosi Kamiyama¹, Isao Akasaki^1,2 (1.Meijo Univ., 2.Akasaki Research Center, Nagoya Univ)

Keywords:semiconductor