2019年第80回応用物理学会秋季学術講演会

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10 スピントロニクス・マグネティクス » 10.2 スピン基盤技術・萌芽的デバイス技術

[20p-E216-8~20] 10.2 スピン基盤技術・萌芽的デバイス技術

2019年9月20日(金) 15:30 〜 19:00 E216 (E216)

三輪 真嗣(東大)、大兼 幹彦(東北大)

17:45 〜 18:00

[20p-E216-16] Spin Hall Effect measurements in Co2MnGa based all-metallic lateral spin valves

〇(D)LIVIO LEIVA1、Simon Granville2、Teruya Shinjo1、Ryo Ohshima1、Yuichiro Ando1、Masashi Shiraishi1 (1.Kyoto Univ.、2.VUW)

キーワード:heusler alloy, spin hall effect, spin injection

All-metallic lateral spin valve (LSV) devices using the Heusler compound Co2MnGa as ferromagnetic electrodes and Cu as non-magnetic channel were fabricated to investigate the inverse spin Hall effect (ISHE). It is expected that the Weyl semimetal Co2MnGa exhibits a large spin hall angle due to its large Berry curvature distribution around the Fermi level, that it is associated with the Weyl points. Large anomalous Hall effect (AHE) and anomalous Nerst effect (ANE) has already been reported for this material, confrming these predictions. In this work, we measured voltages attributed in part to the inverse spin Hall effect in LSVs in a nonlocal 4 terminal configuration, applying an in-plane external magnetic field parallel to the non-magnetic channel. ISHE and AHE coexist in this material, as well as other thermally originated voltages, so the symmetry of the measured signals with respect to the sign of the injection current was exploited in order to separate the contributions. The temperature dependance of these components was analyzed and relevant parameters such as the spin Hall angle were determined as a function of temperature.