[20p-E311-1~17] 15.6 Group IV Compound Semiconductors (SiC)

[20p-E311-6] [Young Scientist Presentation Award Speech] Forward Thermionic Field Emission Current and Reverse Field Emission Current in Heavily-Doped SiC Schottky Barrier Diodes

〇Masahiro Hara¹, Satoshi Asada¹, Takuya Maeda¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Keywords:SiC, Thermionic Field Emission, Field Emission

Basic study on a metal/heavily-doped SiC junction is essential for understanding ohmic contacts on SiC. We clarify that the barrier height of SiC SBDs decreases with increasing the donor concentration, and this barrier height drop can be quantitatively explained by image force lowering. In addition, it is revealed that the forward current-voltage characteristics are well described by a thermionic field emission (TFE) model, and the reverse current-voltage characteristics can be explained by both TFE and field emission (FE) models.