13:30 〜 15:30
▲ [20p-PB2-14] Nitrogen Gas Source FIB Milling for Chiral Nanowires
キーワード：Nitrogen Gas Source FIB, Chirality, Nanowire
True chirality can only be observed in 3 dimensional objects, but due to manufacturing limitations current chiral devices prepared by standard lithographic processes are limited to 2 dimensions.
In this work, the difference between truly 3 dimensional chiral nanowires prepared by Nitrogen gas source Focused Ion Beam (FIB) milling and 2-dimensional nanowires prepared by common electron beam lithography is investigated. Using FIB, a new 3-dimensional device structure is fabricated on a Polymethylacrylate resist. The chiral form used in this project are different types of spirals. The nitrogen gas field ion source FIB at JAIST allows for feature sizes of about 10 nm.
In this work, the difference between truly 3 dimensional chiral nanowires prepared by Nitrogen gas source Focused Ion Beam (FIB) milling and 2-dimensional nanowires prepared by common electron beam lithography is investigated. Using FIB, a new 3-dimensional device structure is fabricated on a Polymethylacrylate resist. The chiral form used in this project are different types of spirals. The nitrogen gas field ion source FIB at JAIST allows for feature sizes of about 10 nm.