2019年第66回応用物理学会春季学術講演会

講演情報

一般セッション(口頭講演)

8 プラズマエレクトロニクス » 8.6 Plasma Electronics English Session

[10a-M103-1~7] 8.6 Plasma Electronics English Session

2019年3月10日(日) 09:00 〜 10:45 M103 (H103)

松浦 寛人(阪府大)

09:45 〜 10:00

[10a-M103-4] Deposition Control of Carbon Nanoparticles Synthesized Using Ar + CH4 Multi-Hollow Discharges

SungHwa Hwang1、Kunihiro Kamataki1、Naho Itagaki1、Kazunori Koga1、Masaharu Shiratani1 (1.Kyushu Univ. for Kyushu University)

キーワード:multi-hollow discharge plasma chemical vapor deposition, Carbon nanoparticles

Carbon nanoparticles (CNPs) are regarded as one of the central materials in nanotechnology. In this study, we have applied Ar + CH4 multi-hollow discharge plasma chemical vapor deposition (MHDPCVD) process to synthesis of CNPs and their deposition on substrates. The produced particle size was nearly the same in a range between 5 and 30 nm. However, nonlinear deposition rate indicates that the deposition mechanism is not simple.