[10p-PA1-1~13] 9.2 ナノ粒子・ナノワイヤ・ナノシート

▲ [10p-PA1-3] The Effects of B Doping on Al-Catalyzed Si Nanowire Formation and Their p-Si/i-Ge Core-Shell Nanowire Structures

〇Wipakorn Jevasuwan¹、Xiaolong Zhang¹、Thiyagu Subramani¹、Ken C. Pradel¹、Ryo Matsumura¹、Naoki Fukata¹ (1.NIMS)

キーワード：Nanowires, Al catalyst, Chemical vapor deposition

One-dimensional nanowires (NWs) have recently attracted great interest for high efficiency solar cells and high electron mobility transistors (HEMT) due to their remarkable electrical, optical and mechanical properties. From our previous reports, VLS growth using Al catalyst was proposed to create single crystalline SiNWs with the resolving of metal catalyst contamination problem. The SiNW-based solar cells with upon 9% efficiency were achieved. However, the unintentional Al doping from catalyst or intentional B doping as p-type dopants in SiNWs for HEMT applications using p-Si/i-Ge core-shell NW structure have not been observed yet. The advantage of this structure is low impurity scattering, as the induced carriers from p-Si core NW are confined and transported in i-Ge shell region. In this study, the effects of B doping on Al catalyzed SiNW formation using VLS growth were investigated. The p-Si/i-Ge core-shell NW properties with various i-Ge shell thicknesses were examined.