[11p-M101-1~7] CS.9 10.1 新物質・新機能創成（作製・評価技術）, 10.2 スピン基盤技術・萌芽的デバイス技術, 10.3 スピンデバイス・磁気メモリ・ストレージ技術,10.4 半導体スピントロニクス・超伝導・強相関のコードシェアセッション

▲ [11p-M101-5] Material dependence of the effect of SOT-MRAM read disturb reduction method

〇(M1)Keisuke Tabata¹、Takayuki Kawahara¹ (1.Tokyo University of science)

キーワード：magnetic memory, SOT-MRAM, spintronics

SOT-MRAM uses spin orbit interaction to control the magnetization of a memory cell. It is believed that because the read and write current paths are separated, the spin Hall effect that occurs during writing does not occur during reading. Therefore, separate optimization for reading and writing is possible. However, we previously reported that the spin Hall effect occurred during reading, which indicated a disturbance in the magnetization of the free layer, and proposed a new memory cell structure as a solution to reduce read disturb. In this paper, the effect of the proposed SOT-MRAM disturb reduction approach was investigated by simulation on the dependence of three types of ferromagnetic materials (iron, cobalt, permalloy), and the reduction ratio of more than one order of magnitude was shown for all materials.