[12a-M101-1~6] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

▼ [12a-M101-2] Spin dependent transport in Co₂FeAl/MgAl₂O₄/CoFe epitaxial magnetic tunnel junctions with and without CoFe insertion

〇Thomas Scheike¹、Hiroaki Sukegawa¹、Tadakatsu Ohkubo¹、Kazuhiro Hono^1,2、Seiji Mitani^1,2 (1.NIMS、2.Univ. of Tsukuba)

キーワード：MTJ, insertion

It is generally known that tunnel magnetoresistance (TMR) and resistance area (RA) are significantly affected by the ferromagnet/barrier interfaces. Here, we study the effect of CoFe insertion in Co₂FeAl/inserted CoFe (0 or 1 nm)/MgAl₂O₄/CoFe(001) MTJs on their crystal structure and spin-dependent transport properties.