[12a-M101-1~6] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

▼ [12a-M101-6] Effect of Magnetic Domain Structure on Noise Property in Magnetic Tunnel Junction Based Sensor

〇(M1C)Shunsuke Komori¹、Kosuke Fujiwara²、Mikihiko Oogane¹、Masakiyo Tsunoda¹、Seiji Kumagai²、Yasuo Ando¹ (1.Tohoku Univ.、2.SSF)

キーワード：TMR, magnetic domain, noise

It is necessary to improve the signal-to-noise ratio in MTJ-based sensors. 1/f noise in the low frequency range is a serious problem, but the origin of the noise in MTJs is still not clear. A possible origin of the noise is fluctuation of magnetic domain in the free layer of MTJs. In this study, we fabricated MTJs with free layers which have various thicknesses and shapes, and investigated their domain structure by magneto-optical Kerr effect to clarify influence of magnetic domain structure on the 1/f noise in MTJ-based sensor.