[12p-M101-1~14] 10.4 半導体スピントロニクス・超伝導・強相関

▲ [12p-M101-7] Heavily Fe-doped n-type ferromagnetic semiconductor (In,Fe)Sb with high Curie temperature and large magnetic anisotropy

〇Tu Thanh Nguyen^1,2、Nam Hai Pham^3,4、Duc Anh Le¹、Masaaki Tanaka^1,4 (1.Tokyo Univ.、2.HCMC Pedagogy Univ.、3.Tokyo Tech. Inst.、4.CSRN Tokyo Univ.)

キーワード：ferromagnetic semiconductor, high Curie temperature, large magnetic anisotropy

We present high-temperature ferromagnetism and large magnetic anisotropy in heavily Fe-doped n-type ferromagnetic semiconductor (In_1-x,Fe_x)Sb (x = 20 – 35%) thin films grown by low-temperature molecular beam epitaxy. The (In_1-x,Fe_x)Sb thin films with x = 20 – 35% maintain the zinc-blende crystal and band structure with single-phase ferromagnetism. The Curie temperature (T_C) of (In_1-x,Fe_x)Sb reaches 390 K at x = 35%, which is significantly higher than room temperature and the highest value so far reported in III-V based ferromagnetic semiconductors. Moreover, large coercive force (H_C = 160 Oe) and large remanent magnetization (M_r/M_S = 71%) have been observed for a (In_1-x,Fe_x)Sb thin film with x = 35%. Our results indicate that the n-type ferromagnetic semiconductor (In_1-x,Fe_x)Sb is very promising for spintronics devices operating at room temperature.