2019年第66回応用物理学会春季学術講演会

講演情報

一般セッション(口頭講演)

15 結晶工学 » 15.1 バルク結晶成長

[9a-S422-1~13] 15.1 バルク結晶成長

2019年3月9日(土) 09:00 〜 12:15 S422 (S422)

横田 有為(東北大)、荻野 拓(産総研)

10:00 〜 10:15

[9a-S422-5] 2-inch size Czochralski growth and scintillation properties of Mo co-doped Ce:Gd3Ga3Al2O12 (GAGG)

KYOUNGJIN KIM1、Kei Kamada2,3、Yasuhiro Shoji3,1、Masao Yoshino1、Vladimir V. Kochurikhin3、Akihiro Yamaji1、Shunsuke Kurosawa2,4、Yuui Yokota2、Yuji Ohashi2、Akira Yoshikawa1,2,3 (1.IMR, Tohoku Univ.、2.NICHe, Tohoku Univ.、3.C&A Corp.、4.Yamagata Univ.)

キーワード:Scintillator, Single crystal growth, GAGG

The 2-inch size Ce:GAGG and Mo co-doped Ce:GAGG single crystals were prepared by the Czochralski (Cz) method. Absorption and luminescence spectra were measured together with several other scintillation characteristics, namely the scintillation decay and light yield to reveal the effect of Mo co-doping. Comparing to Ce3+ only doped GAGG, Mo co-doped crystal shows a clear improvement in light yield same as previously investigated m-PD grown GAGG samples. Details of large size crystal growth and changes in scintillation properties with Mo co-doping will be discussed.