10:00 〜 10:15
▲ [10a-Z29-7] CVD synthesis of various polygonal-shaped h-BN single crystals<gdiv></gdiv>
キーワード：hexagonal boron nitride (h-BN), Chemical vapor depositon, Crystal growth
Hexagonal boron nitride (h-BN), a structural analogue of graphene, is a wide bandgap 2D insulating layered material, consisting of alternating sp2–bonded boron and nitrogen atoms. h-BN shows appealing properties such as thermally stable in air up to 800oC, chemical inertness, stable thermal conductivity, and superior elastic properties, and hence has drawn significant attention as a promising material in frontier applications. Although chemical vapor deposition (CVD) technique has developed as the most scalable process to synthesize h-BN on transition metals, the formation of various polygonal-shaped single domain is unclear and are still limited to few microns in their edge length. In this research, we study the growth kinetics of h-BN crystals larger than 25um via morphological transition.<gdiv></gdiv>