[10p-Z08-1~10] 10.2 スピン基盤技術・萌芽的デバイス技術

▲ [10p-Z08-5] Spin Hall effect in non-equilibrium Cu-based binary alloys

〇Hiroto Masuda¹、Rajkumar Modak²、Takeshi Seki^1,2,3、Ken-ichi Uchida^1,2,3、Yong Chang Lau^1,3、Yuya Sakuraba^2,4、Ryo Iguchi²、Koki Takanashi^1,3,5 (1.IMR, Tohoku Univ.、2.NIMS、3.CSRN, Tohoku Univ.、4.JST PRESTO、5.CSIS, Tohoku Univ.)

キーワード：Spin Hall effect, Combinatorial technique, Non-equilibrium alloy

In this study, we comprehensively carried out a study on the spin Hall effect of non-equilibrium Cu-Ir and Cu-Bi binary alloys by exploiting a combinatorial technique based on the thermal imaging for a composition-spread film. We have found that the optimum Ir concentration for enhancing SHE of Cu-Ir is around 25 at.%. We evaluated spin Hall angle of Cu₇₆Ir₂₄ to be 6.29± 0.19 % using the harmonic Hall voltage measurements. On the other hand, the Cu-Bi binary alloys showed no remarkable SHE.