[11p-Z04-1~14] 13.7 化合物及びパワー電子デバイス・プロセス技術

▲ [11p-Z04-6] Aperture-Limited Conduction in Vertical β-Ga₂O₃ MOSFETs with Nitrogen-Implanted Current Blocking Layer

〇ManHoi Wong¹、Hisashi Murakami²、Yoshinao Kumagai²、Masataka Higashiwaki¹ (1.NICT、2.Tokyo Univ. Agricul. Technol.)

キーワード：gallium oxide, implantation, diffusion

Ga₂O₃ is attractive for power electronics owing to its ultrawide bandgap and the availability of economical melt-grown native substrates. Capitalizing on ion-implantation doping technologies for Ga₂O₃, we have demonstrated vertical Ga₂O₃ MOSFETs in which drain current is conducted through an aperture opening bounded by current blocking layers. It is imperative that the aperture size (L_ap) be properly engineered to prevent current choke while maintaining a small specific on-resistance. In this work, we studied the influence of L_ap on the on-state characteristics of current aperture vertical Ga₂O₃ MOSFETs, the results of which were suggestive of diffusion of acceptors into the aperture.