2020年第67回応用物理学会春季学術講演会

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一般セッション(口頭講演)

3 光・フォトニクス » 3.9 テラヘルツ全般

[12a-B414-1~10] 3.9 テラヘルツ全般

2020年3月12日(木) 09:00 〜 11:45 B414 (2-414)

諸橋 功(情通機構)、瀧田 佑馬(理研)

10:30 〜 10:45

[12a-B414-6] Frequency increase in resonant-tunneling diode THz oscillator by simulation-based structure optimization

〇(D)Mikhail Bezhko1、Safumi Suzuki1、Masahiro Asada1 (1.Tokyo Tech)

キーワード:resonant tunneling diode, Terahertz oscillator, THz electromagnetic simulation

Terahertz (THz) radiation, in the range between the light waves and millimeter waves, has gained much attention because of its various promising applications. Resonant tunneling diodes (RTDs) have the potential for use as compact and coherent terahertz (THz) sources operating at room temperature. In this work oscillation frequency limitations and structure dependences for RTD THz oscillator with cylindrical cavity resonator are analyzed. It is revealed that there is only one combination of the resonant cavity dimensions which gives the maximum possible oscillation frequency for this type of structure. Based on the dependences of the oscillation frequency on resonant cavity dimensions, a method of the oscillator structure optimization was proposed. Analysis of the calculation results has shown that fundamental oscillation up to 2.77 THz could be expected for the RTD device considered in the present study by using proposed optimization technique.