The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[12p-B401-1~16] 13.7 Compound and power electron devices and process technology

Thu. Mar 12, 2020 1:15 PM - 5:30 PM B401 (2-401)

Masashi Kato(Nagoya Inst. of Tech.)

1:15 PM - 1:30 PM

[12p-B401-1] Anisotropy of GaN appearing by low bias dry etching using Cl2 gas

〇(B)Yushi Hamaya1, Moe Okamoto1, Satoko Shinkai1 (1.Kyuukou Univ)

Keywords:gallium nitride