[12p-D419-1~15] 21.1 合同セッションＫ 「ワイドギャップ酸化物半導体材料・デバイス」

▼ [12p-D419-14] Observation of Reverse Leakage Current in (001) b-Gallium Oxide
Schottky Barrier Diodes by High Sensitive Emission Microscope

〇(M2)Sayleap Sdoeung¹、Kohei Sasaki²、Akito Kuramata²、Makoto Kasu¹ (1.Saga Univ.、2.Novel Crystal Technology)

キーワード：beta-gallium oxide, crystal defects, Schottky barrier diode

b-Gallium oxide (b-Ga₂O₃) possesses a wide bandgap of 4.8 eV which makes this material more preferable for high-power electronic devices. Besides, large size single crystal of b-Ga₂O₃ can be achieved from melt growth techniques that are economically beneficial for large-scale device fabrication. However, crystal defects in this material are the main obstacle for the reliability of device operation, yet their impact on device characteristic is not clearly known. Therefore, in this study, by utilizing a high sensitive emission microscope, we investigate and identify the origin of reverse leakage current in b-Ga₂O₃ Schottky barrier diodes (SBDs).