[13a-A501-1~8] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

▼ [13a-A501-1] Theoretical prediction of giant tunnel magnetoresistance in (111)-oriented magnetic tunnel junctions

〇Keisuke Masuda¹、Hiroyoshi Itoh²、Yoshio Miura¹ (1.NIMS、2.Kansai Univ.)

キーワード：tunnel magnetoresistance effect, magnetic tunnel junction, first-principles calculation

We propose unprecedentedly high tunnel magnetoresistance (TMR) based on a new mechanism in unconventional (111)-oriented magnetic tunnel junctions (MTJs). Using the first-principles-based transport calculation, we found that the Co/MgO/Co(111) MTJ has a quite high TMR ratio driven by the interfacial resonance effect. These our findings not only advance the fundamental understanding on TMR but also give a new insight to experimentally explore wider range of MTJs for higher TMR ratios.