[14a-A302-1~13] 15.4 III-V族窒化物結晶

▲ [14a-A302-7] High quality AlN film on sapphire prepared by two step sputtering-annealing

〇Ding Wang¹、Kenjiro Uesugi²、Shiyu Xiao¹、Yuta Tezen²、Kenji Norimatsu²、Kanako Shojiki³、Shigeyuki Kuboya²、Hideto Miyake^1,3 (1.Grad. School of RIS, Mie Univ.、2.SPORR, Mie Univ.、3.Grad. School of Eng., Mie Univ.)

キーワード：AlN substrate, High quality, UV-LED

High quality AlN/sapphire templates are realized using a two step sputtering-annealing technique. Adopting a second sputter-annealing on top of a sputter-annealing prepared AlN thin film, the AlN layer is able to undergo a longer annealing time with flat post-annealing surface, resulting in a total dislocation density of 3.7×10⁷ cm^-2 measured by X-ray diffraction. The high-quality AlN templates are expected to breed high-performance nitride-based UV-LEDs and electronic devices.