[14a-PA2-1~18] 9.2 ナノ粒子・ナノワイヤ・ナノシート

▲ [14a-PA2-14] Hole Gas Density Enhancement in Al-Catalyzed SiNW/i-Ge Core-Shell Structure by Thin B-doped Layer Interposition

〇Wipakorn Jevasuwan¹、Xiaolong Zhang¹、Ryo Matsumura¹、Naoki Fukata¹ (1.NIMS)

キーワード：Nanowire, Al catalyst, chemical vapor deposition

Si/Ge core-shell nanowire (NW) structures have recently attracted great attention for high electron mobility transistors due to their remarkable electrical and mechanical properties. The advantage of this structure is low impurity scattering, as the induced carriers from p-Si core NW are confined and transported in the i-Ge shell region. From our previous reports, the vapor-liquid-solid (VLS) growth using Al catalysts could create single-crystalline SiNWs with the resolving of metal catalyst contamination problem. The hole gas accumulation in the i-Ge shell region of unintentional Al-doped p-Si/i-Ge core-shell NWs were observed. However, the carrier concentration of Al doping from the catalyst in p-SiNWs was limited and difficult to further increase by adding B doping, resulting in the limit of hole gas inducement. Therefore, in this study, the effect of the thin B-doped Si intermediate layer in core-shell NW structure on the hole gas generation was investigated.