[14a-PA5-1~23] 13.9 化合物太陽電池

▲ [14a-PA5-5] Analysis of Recombination in RbF Treated CIGS Solar Cells with Different Ga content

〇(M2)Hamidou Tangara¹、Jennifer Not²、Setareh Zahedi-Azad³、Jakob Schick³、Alban Lafuente Sampietro¹、Roland Scheer³、Takeaki Sakurai¹ (1.Univ. Tsukuba、2.Univ. Grenoble Alpes、3.Martin-Luther Univ. Halle-Wittemberg)

キーワード：CIGS solar cells, Rubidium treatment, Recombination analysis

In this work, we report a comparative study of the impact of rubidium (RbF) PDT on the electronic properties and the recombination mechanisms of CIGS materials in low and high Ga cases. CIGSe samples with different [Ga]/([Ga]+[In]), GGI of 0.3, 0.6 and 0.73 were deposited on Mo-coated soda-lime glass by co-evaporation in a multi-stage process. Temperature and light intensity-dependent I-V measurements were performed to get an insight into the different recombination rates. The recombination rates for CIGSe with GGI= 0.3 and 0.6 with and without RbF-PDT, at thermal equilibrium, indicate that RbF-PDT is most effective in reducing the recombination in CIGSe for all GGI cases.