[14p-A305-1~14] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[14p-A305-1] [Young Scientist Presentation Award Speech] Dependence of chlorine adsorption layer on ion energy on Ar ion-irradiated GaN surface (2)

〇Masaki Hasegawa¹, Takayoshi Tsutsumi¹, Atsushi Tanide^1,2, Hiroki Kondo¹, Makoto Sekine¹, Kenji Ishikawa¹, Masaru Hori¹ (1.Nagoya Univ., 2.SCREEN Holdings Co., Ltd.)

Keywords:Gallium Nitride, Atomic Layer Etching