Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[10a-N203-1~10] 15.7 Crystal characterization, impurities and crystal defects

Fri. Sep 10, 2021 9:00 AM - 11:45 AM N203 (Oral)

Kazuhisa Torigoe(SUMCO), Takuo Sasaki(QST), Takuto Kojima(Nagoya Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[10a-N203-1] Investigation of Constitutional Supercooling during Cz Silicon Growth by Numerical Modeling

〇(D)Yuji Mukaiyama^1,2, Vladimir Artemiev³, Vladimir Kalaev³, Koji Sueoka⁴ (1.Graduate School of Okayama Pref. Univ., 2.STR Japan K.K., 3.STR Group, Inc., 4.Okayama Pref. Univ.)

9:15 AM - 9:30 AM

[10a-N203-2] First principle spectroscopic calculation for RIXS through Radial part solutions of Electron distribution wavefuncion

〇Jun Inagaki¹ (1.Tamkang University)

9:30 AM - 9:45 AM

△ [10a-N203-3] Large-scale atomic level calculation of vacancy clusters in Si crystal using ANN potential (3)

〇(M2)Takuto Ushiro¹, Tatsuya Yokoi², Yusuke Noda³, Eiji Kamiyama³, Masato Ohbitsu¹, Hiroki Nagakura¹, Koji Sueoka³ (1.Graduate School of Engineering, Okayama Pref. Univ., 2.Graduate School of Engineering, Nagoya Univ., 3.Okayama Pref. Univ.)

9:45 AM - 10:00 AM

△ [10a-N203-4] ANN potential analysis on stability of extended interstitial defects in Si crystal

〇(M2)Masato Ohbitsu¹, Tatsuya Yokoi², Eiji Kamiyama³, Takuto Ushiro¹, Hiroki Nagakura¹, Yusuke Noda³, Koji Sueoka³ (1.Graduate School of Engineering, Okayama Pref. Univ., 2.Graduate School of Engineering, Nagoya Univ., 3.Okayama Pref. Univ.)

10:15 AM - 10:30 AM

[10a-N203-5] Parameter identification for thermal fluid simulation in crystal growth using multi-data

〇Hiroyuki Tanaka¹, Kentaro Kutsukake², Takuto Kojima³, Xin Liu¹, Noritaka Usami¹ (1.Graduate School of Eng., Nagoya Univ., 2.AIP, RIKEN, 3.Graduate School of Info., Nagoya Univ.)

10:30 AM - 10:45 AM

[10a-N203-6] 3D multicrystalline Si modeling by experiments and data scientific methods
and finite element stress analysis

〇Kenta Yamakoshi¹, Kentaro Kutsukake², Takuto Kojima³, Hiroaki Kudo³, Noritaka Usami¹ (1.Grad. Eng. Nagoya Univ., 2.RIKEN AIP, 3.Grad. Info. Nagoya Univ.)

10:45 AM - 11:00 AM

[10a-N203-7] Growth angle dependence of Basal plane dislocation density in a PVT-SiC crystal

〇Koichi Kakimoto¹, Satoshi Nakano¹ (1.RIAM, Kyushu Univ.)

11:00 AM - 11:15 AM

[10a-N203-8] Evaluation of dislocation in ScAlMgO₄ crystal by transmission X-ray topography

〇Kotaro Ishiji¹, Takashi Fujii^2,3, Tsutomu Araki², Tsuguo Fukuda³ (1.SAGA-LS, 2.Ritsumeikan Univ, 3.Fukuda Crystal Lab)

11:15 AM - 11:30 AM

[10a-N203-9] Phase transitions and crystal structure of BaTiO₃ polyhedra

〇Reiji Yamauchi¹, Sangwook Kim¹, Chikako Moriyoshi¹, Yoshihiro Kuroiwa¹, Ichiro Fujii², Shintaro Ueno², Satoshi Wada² (1.Hiroshima Univ., 2.Univ. of Yamanashi.)

11:30 AM - 11:45 AM

[10a-N203-10] Precise detection of carrier lifetime limited by surface-recombination processes
in GaAs (110) using time-resolved two-photon photoemission spectroscopy

〇Shuhei Ichikawa^1,2, Hidehiro Yasuda^1,2 (1.Research Center for UHVEM, Osaka Univ., 2.Osaka Univ.)

Session information