[10p-N104-1~18] 16.3 シリコン系太陽電池

▲ [10p-N104-3] Silicon Heterojunction Solar Cells with Flash Lamp Annealing on a Counter-Doped n-a-Si Film

〇(M2)Ukei Riyuu¹、Huynh Thi Cam Tu¹、Noboru Yamaguchi²、Keisuke Ohdaira¹ (1.JAIST、2.ULVAC Inc.)

キーワード：SHJ solar cells, Phosphine Plasma Ion Implantation, FLA

In this work, we evaluate silicon heterojunction (SHJ) solar cells’ properties with counter-doped n-a-Si film treated by FLA. The SHJ cells were prepared with a structure of p-a-Si/i-a-Si/n-c-Si/i-a-Si/p-a-Si by catalytic chemical vapor deposition (Cat-CVD), and then ion implantation and FLA are performed. After forming ITO films and Ag electrodes on both sides of the wafers by RF sputtering and thermal evaporation, a post-annealing at 200 Celsius for 30 min was performed. The solar cells were characterized by measuring J–V characteristics under 1-sun illumination. By increasing the FLA fluence, the FF was significantly improved. This is considered to be due to enhancement in the electrical conduction of the counter-doped n-a-Si film resulting from the activation of implanted P atoms. The efficiency of 11 % of the SHJ cell treated by FLA at 15.5 J/cm² exhibits a promising result of combining FLA and PII to fabricate the low cost IBC-SHJ cells. The cause of degradation in J_sc and V_oc at a FLA fluence of 16.5 J/cm² is still unclear, and a further investigation is needed.