[10p-N202-1~19] 15.5 IV族結晶，IV-IV族混晶

▲ [10p-N202-4] Dopant Redistribution in High Temperature Grown Sb-doped Ge Epitaxial Films

〇Rahmat Hadi Saputro^1,2、Ryo Matsumura¹、Naoki Fukata^1,2 (1.NIMS、2.Univ. of Tsukuba)

キーワード：Germanium, Dopant, Epitaxy

The development of Ge-based materials potentially allows Si-compatible high-speed devices. Our group has demonstrated the formation of n⁺-Ge for device application by in-situ doping of Sb using molecular beam epitaxy (MBE). It was found that heating the substrate at ≥350℃ remarkably improves the crystallinity of Sb-doped Ge layer. However, the high temperature heating during deposition reduces the dopant density, thus deteriorating the performance of fabricated devices. The underlying mechanism behind this behavior were unknown, while dopant distribution in the deposited layer is one of the crucial factors that govern its electrical properties. In this report, we investigated this behavior and explain the mechanism of dopant redistribution during the growth of Sb-doped Ge epitaxial films.