The 82nd JSAP Autumn Meeting 2021

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Oral presentation

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[10p-N303-1~19] 13.8 Optical properties and light-emitting devices

Fri. Sep 10, 2021 1:30 PM - 6:30 PM N303 (Oral)

Ariyuki Kato(Nagaoka Univ. of Tech.), Jun Tatebayashi(Osaka Univ.)

4:45 PM - 5:00 PM

[10p-N303-13] Temperature And Excitation Intensity Dependence Of Infrared Photoluminescence Peaks In InAs/GaSb Superlattice Grown By MOVPE Method

〇Yuto Iwakiri1, Tomohiro Ohama1, Masakazu Arai1, Takeshi Fujisawa2, Koji Maeda1 (1.Miyazaki Univ., 2.Hokkaido Univ.)

Keywords:photoluminescence