2021年第82回応用物理学会秋季学術講演会

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13 半導体 » 13.8 光物性・発光デバイス

[10p-N303-1~19] 13.8 光物性・発光デバイス

2021年9月10日(金) 13:30 〜 18:30 N303 (口頭)

加藤 有行(長岡技科大)、舘林 潤(阪大)

18:15 〜 18:30

[10p-N303-19] Photoconduction, Luminescence and Optical Absorption of Porous Nano-Silicon during Chemical Oxidation in aqueous solutions

Bernard Gelloz1、Souki Sakata2、Lianhua Jin2 (1.Nagoya Univ.、2.Yamanashi Univ.)

キーワード:porous silicon, luminescence, oxidation

The photocurrent, a signature of light transmission through porous silicon (PSi), was used to study the chemical oxidation of p-type PSi in different aqueous solutions. The photocurrent increases as the oxidation progresses since the formed oxide is transparent at the 405 nm light. A model was developed to explain its progress, based on oxidation rates and silicon oxide dissolution rates. The PL increases during oxidation as a result of increased quantum confinement in the PSi structure. Eventually, the efficiency decreases, most likely due to the inevitable decrease in Si emitting centers after the oxidation has consumed a large amount of silicon. Our results shows that the PL efficiency may increase more when the oxide is grown at a slow rate compared to at a high rate.