[11a-N205-1~11] CS.9 6.1 強誘電体薄膜、13.3 絶縁膜技術、13.5 デバイス／配線／集積化技術のコードシェアセッション

▼ [11a-N205-3] The effect of sputtering power for Pt gate electrode deposition on the ferroelectric property of 5 nm thick undoped HfO₂

〇JoongWon Shin¹、Masakazu Tanuma¹、Shun-ichiro Ohmi¹ (1.Tokyo Inst. of Technology)

キーワード：Ferroelectric undoped HfO2, Pt gate electrode, RF magnetron sputtering

In this research, we investigated the influence of sputtering power for Pt gate electrode deposition to improve the ferroelectricity of 5 nm thick undoped HfO₂ formation. Because of the improvement of interface property with the smallest density of states, the lowest leakage current was observed in case of 40 W. Furthermore, the ferroelectricity of 5 nm thick HfO₂ was improved with the largest remnant polarization (2P_r) due to the suppression of charge injection phenomenon by the sputtering power of 40 W.
Therefore, low sputtering power of 40 W for Pt electrode deposition was effective to improve the ferroelectricity of 5 nm thick undoped HfO₂.