[11p-N324-1~6] Current study and latest trend in radiation measurement technology and materials

[11p-N324-2] Development of neutron detector using group-III nitride semiconductor

〇Takayuki Nakano^1,2, Toru Aoki^1,2 (1.R.I.E. Shizuoka Univ., 2.Shizuoka Univ.)

Keywords:neutron detector, semiconductor detector, group-III nitride

A BGaN, which is a group-III nitride semiconductor material, has been proposed and developed as a neutron semiconductor detector. In our research, BGaN epitaxial growth have been achieved using metal organic vapor phase epitaxy, and the energy detection signals corresponding to the neutron capture reaction have been obtained from the fabricated BGaN diodes.