[12a-N304-1~11] 13.5 デバイス／配線／集積化技術

▲ [12a-N304-7] Hole mobility enhancement in extremely-thin body asymmetrically-strained (100) GOI pMOSFETs

〇(DC)CHIATSONG CHEN¹、Ryo Yokogawa^2,3、Kasidit Toprasertpong¹、Atsushi Ogura^2,3、Mitsuru Takenaka¹、Shinichi Takagi¹ (1.Univ. of Tokyo、2.Meiji Univ.、3.MREL)

キーワード：GOI, extremely-thin body, asymmetric strain

We demonstrate high performance asymmetric strain (100) Ge-on-insulator (GOI) pFETs with body thickness (T_body) ranging from 10.6 to 3.8 nm by combining Ge condensation with channel width narrowing. Thanks to asymmetric strain, effective hole mobility (μ_eff) of 312 cm²/Vs is achieved on 3.8-nm-thick GOI, leading to 2.4x mobility enhancement against biaxial strain. The effectiveness of asymmetric strain on extremely-thin channels is confirmed even in T_body less than 5 nm.