[12a-N306-1~9] 17.1 カーボンナノチューブ，他のナノカーボン材料

▲ [12a-N306-4] O2 assisted growth of small-diameter vertically-aligned SWCNTs using Ir catalyst

〇(PC)Kamal Prasad Sharma¹、Masaya Kobayashi¹、Daiki Yamamoto¹、Takahiro Maruyama¹ (1.Meijo Univ.)

キーワード：Single-walled carbon nanotubes (SWCNTs), Chemical vapor deposition (CVD)

Single-walled carbon nanotube (SWCNT) is realized as a promising material for fore frontier application due to its superior chemical, electrical and optical properties. The band gap of semiconducting SWCNTs increases on decreasing diameter, and a band gap of larger than 1 eV is achievable by SWCNTs of diameter smaller than 1 nm (2,3) which is highly desirable for electronic application. Recently, we have reported an efficient technique for the synthesis of small-diameter vertically-aligned SWCNTs (VA-SWCNTs) by alcohol catalytic chemical vapor deposition (ACCVD). In this research, we challenged to improve the growth rate of VA-SWCNTs.