[12a-N322-1~9] 12.5 有機太陽電池

▲ [12a-N322-7] High-Quality Oxide Interfacial Layer for Silicon Organic Hybrid Solar Cell Applications

〇(D)Aditya Saha¹、Daisuke Ohori¹、Seiji Samukawa^1,2 (1.IFS, Tohoku Univ.、2.AIMR, Tohoku Univ.)

キーワード：hybrid solar cells, neutral beam oxidation, passivation

Research around inexpensive and renewable energy sources is increasingly becoming one of the most important challenges of our time due to the alarming rate and effects of global warming. Recently, hybrid solar cell architectures which use n-type Si as the absorber and PEDOT:PSS as the carrier-selective contact have been able to achieve device efficiencies exceeding 20%. Despite showing great potential, these devices suffer from poor reliability and rapid performance degradation. Several factors for this have been suggested, among which the quality of the silicon-PEDOT:PSS interface plays a key role. It has been shown that silicon deposited with PEDOT:PSS will form an interfacial oxide layer, which will degrade the performance of the cell as it grows. Attempts to grow a native oxide passivating tunneling layer under ambient conditions before deposition are inadequate due to the large number of defects and reaction sites still present on the substrate. This research reports that a high-quality silicon oxide interfacial layer grown using Neutral Beam Oxidation (NBO) can form a stable passivating tunneling layer for future solar cell applications.