[12a-S203-1~9] 6.3 酸化物エレクトロニクス

▼ [12a-S203-9] Solid-state electrochemical redox control of
the optoelectronic properties for SrFeO_x thin films

〇(DC)Qian Yang¹、Haijun Cho²、Hyoungjeen Jeen³、Hiromichi Ohta² (1.IST-Hokkaido Univ.、2.RIES-Hokkaido Univ.、3.Pusan Nat'l Univ.)

キーワード：Oxide electronics

By utilizing redox reactions, the physical properties of several transition metal oxides can be drastically changed, which is useful for developing multifunctional memory devices. Strontium iron oxide (SrFeO_x), which exhibits a clear phase transition from antiferromagnetic insulator (x = 2.5) to helimagnetic metal (x = 3), is a good candidate for the active material in multifunctional memory devices. However, practical applications using previous demonstrations of redox reactions in SrFeO_x are limited by the use of a liquid electrolyte due to the leakage problem. In our previous study, we successfully realized the electrochemical oxidation reaction of SrCoO_x by using yttria-stabilized zirconia (YSZ) as the solid-state electrolyte. Here, we fabricated SrFeO_x epitaxial films on YSZ single crystal substrate and performed electrochemical redox reaction. The present results would provide a design concept for future SrFeO_x-based solid-state device.